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Lateral Schottky or heterojunction rectifiers were irradiated with 10 MeV protons and neutrons. For proton irradiation, the forward current of both types of rectifiers decreased by approximately an order of magnitude, with a corresponding increase in on-state resistance. The resultant on/off ratio improved after irradiation because of the larger decrease in reverse current compared to forward current. Both types of rectifiers displayed a shift in forward current and RON curves to lower voltages after irradiation. This could be due to defects created by neutron irradiation introducing deep energy levels within the bandgap of AlN. These deep levels can trap charge carriers, reducing their mobility and increasing the on-state resistance. Transmission electron microscopy showed disorder created at the AlN/NiO interface by neutron irradiation. TCAD simulation was used to study the effects of irradiation with both protons and neutrons. The results confirmed that the irradiation caused a significant reduction in electron concentration and a small increase in the recombination rate. Neutron irradiation can also introduce interface states at the metal or oxide-semiconductor junction of the rectifier. These interface states can modify the effective Schottky barrier height, affecting the forward voltage drop and on-state resistance.